GaN HEMT – 氮化镓晶体管 - Infineon Technologies

综述

CoolGaN™ - 为消费、工业和汽车应用提供最高效率和功率密度的分立与集成解决方案

英飞凌的GaN晶体管在高达 700 V 的电压范围内可实现高效的功率转换。我们的GaN器件具有快速的导通/关断速度、最小的开关损耗和多种封装选择，能够简单快速地将产品推向市场。这些器件不仅符合广泛标准，还超越行业标准。GaN技术大大提高了系统的整体性能，并最大限度地降低了系统成本，提高了易用性。

特点

40 V - 700 V GaN 晶体管
增强型（e-mode）
4 A 至 150 A 选择范围
集成功率级
广泛的封装选择
超快开关速度
无反向恢复电荷
可反向传导
低栅极和输出电荷
卓越的 FOMs

驱动 GaN

英飞凌提供广泛的单通道与双通道隔离与非隔离 GaN 驱动器产品组合。当与英飞凌的 GaN 功率半导体相结合时，使用 EiceDRIVER™ 栅极驱动器 IC 可提供众多优势，如更高效率和功率密度，以及在功率转换应用中的卓越性能。此外，这些器件还具有高可靠性，即使在极具挑战性的情况下也能确保坚固耐用。

应用

氮化镓的目标应用包括 USB-C 适配器和充电器、48 V 配电、服务器和电信开关电源、太阳能和储能系统、电机驱动器、机器人和无人机等。

创新

英飞凌CoolGaN™技术提供变革性解决方案，将您的设计推向新的高度。

了解我们最新和即将推出的产品开发，从功率晶体管到高度集成的解决方案，具有卓越的可靠性，一流的质量，最高的功率密度和领先的效率。点击这里了解更多。

向 GaN 社区提问

英飞凌开发人员社区全天候为您提供服务，帮助您与全球各地的工程师建立联系。您可以随时随地获得英飞凌支持工程师和专家成员的帮助，以任何主题和语言解决您的设计难题。

向社区提问

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培训

High-speed PCB design and layout focuses

When we are designing a switching mode power supply, PCB layout is always an important topic. Solving interference problems by slowing down the switching speed of power devices is no longer a solution. Join us to see how to optimize PCB layouts.

Introducing CoolGaN™ half-bridge IPS in high-density charger/adapter applications

Get to know the features of CoolGaN™ half-bridge IPS and the benefits it brings for charger/adapter applications
Identify the topologies in which a CoolGaN™ half-bridge IPS can be used to build a charger/adapter
Be acquainted with a use case for CoolGaN™ half-bridge IPS

Watch eLearning

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This training provides an insight about the system benefits of wide-bandgap devices, which will conquer market share in areas where power density, efficiency and/or battery range are decisive. The training focuses on two applications, mobile chargers and on-board chargers, and will talk about the challenges faced by the solutions today and how SiC and GaN provide next levels of performance.

Bi-directional converters using WBG

Understand why to use WBG switches for bi-directional converters, the topologies used and how they function.

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Benefits of low inductance packages for wide bandgap semiconductors

By watching this eLearning you will:

Understand package inductance
Know why wide bandgap transistors are more susceptible to package inductance, and
Identify which Infineon package types have lower inductance