混合单管
经济高效且开关损耗超低的功率开关
以肖特基势垒二极管作为反并联二极管,与IGBT相组合,可拓展 IGBT 的能力,同时大幅降低导通损耗(Eon)和总开关损耗。续流的 SiC 肖特基势垒二极管可大幅降低开关损耗,同时dv/dt和di/dt值几乎不变。
快速、轻松、即插即用地替换650 V TRENCHSTOP™5 IGBT设计,使得可将每10 kHz 开关频率的效率提高0.1%,这意味着如果某个应用的开关速度是 23 kHz,其效率即可提高大约 0.23%。使用4引开尔文-发射极封装的CoolSiC™混合单管,还可进一步降低开关损耗,从而实现更大幅度的效率提升。
650 V CoolSiC™混合单管结合了一流的650 V TRENCHSTOP™5 IGBT技术与单极结构的CoolSiC™肖特基势垒二极管的主要优点:
效益 | 优势 | 优势 |
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具有开尔文发射极的 TO-247 4 引脚封装
具有开尔文发射极的 TO-247 4 引脚封装能够实现更快的换向,从而改善 IGBT 的开关行为。与标准 TO-247 相比,动态损耗降低了 20%,从而提高整个系统的效率,使 IGBT 能够在较低的温度下工作。
IGBT 的开关速度越快,TO-247 4 引脚带来的好处就越多。
In this training, we will show you step by step where and how to access Infineon SPICE and PLECS simulation models for its discrete IGBTs and CoolSiC™ products.
We will also show how to use these models and tools in an offline and online simulation.
In this training, we will show you step by step where and how to access Infineon PLECS simulation models for its discrete IGBTs and CoolSiC™ products as well as online simulation tools.
We will also show you the differences between hard and soft switching models.