不带反并联二极管的单管 IGBT

综述

为太阳能、变频驱动、UPS、焊接和其他硬开关应用提供先进的的解决方案

产品
亮点

新款TRENCHSTOP™ 高级绝缘

Product picture of TRENCHSTOP Advanced Isolation HSIP247-3-1 Combi

新的 TRENCHSTOP™高级绝缘是一种尖端的绝缘封装技术。 高级绝缘材料与高级绝缘箔相比，热阻R th(j-h) 降低了35%，同时为芯片到热沉之间提供有效和可靠的热通路。 当使用新 TRENCHSTOP™ 高级绝缘技术的TO-247封装取代使用标准的绝缘箔的TO-247封装时，外壳温度T c 可以降低将近10°C左右，同时可以增加近20%的输出功率P out。

1200 V TRENCHSTOP™ IGBT7

Product picture 1200V TRENCHSTOP™ IGBT7 TO-247

The extensive 1200 V TRENCHSTOP™ IGBT7 S7 portfolio represents the superior option for all industrial applications requiring short circuit capability/ruggedness. The IGBT7 with its superior controllability and short-circuit ruggedness represents the benchmark among SC devices thanks to superior electrical performances, higher controllability, easy EMI design and higher reliability in application with harsh conditions (HV-H3TRB and cosmic ray robustness).

TO-247 4引脚S5 TRENCHSTOP™ 5封装

Product picture of TRENCHSTOP5 S5 TO-247-4-T5

新款50 A和75 A S5 650 V TRENCHSTOP™5 IGBT采用TO-247 4引脚开尔文发射极封装，在10 kHz至40 kHz中速切换区间提供最高效率。

面向1200 V IGBT的TO-247PLUS 3引脚封装

Product Picture of TO-247PLUS 3pin for 1200 V IGBT

新款TO-247PLUS封装更大的有源芯片面积可支持75 A IGBT，同时TO-247封装支持75 A二极管。TO-247PLUS更高的功率密度可用于减少并联、增加系统功率密度或系统输出功率。

面向1200 V IGBT的TO-247PLUS 4引脚封装

Product Picture of TO-247PLUS 4pin for 1200 V IGBT

作为开尔文发射极端子的第4根引脚，绕过栅极控制回路上的发射极引线电感，提高IGBT的开关速度并降低开关能量。

相关信息

EiceDRIVER™ gate driver ICs for MOSFETs, IGBTs, SiC MOSFETs and GaN HEMTs
Concepts providing electrical performance and highest reliability without limiting the design flexibility
CIPOS™ Intelligent Power Modules in different packages, voltage and current classes.

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Infineon EiceDRIVER™ gate driver ICs Selection guide 2019 - Every switch needs a driver
Power and Sensing Selection Guide 2019
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