IKQ75N120CH3
综述
1200 V, 75 A IGBT with anti-parallel diode in TO-247 package
Hard-switching 1200 V, 75 A HighSpeed 3 H3 in a TO-247 package co-packed with a soft and fast recovery full current anti-parallel emitter controlled diode.
特征描述
- High power density – up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
- 20% lower R th(jh) compared to TO-247 3 pin
- Extended collector-emitter pin creepage of 4.25 mm
- Extended clip creepage due to fully encapsulated front side of the package
优势
- Higher system power density – I c increase keeping the same system thermal performance
- Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247
- Higher reliability, extended lifetime of the device
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