IAUZN04S7N020 60 A, 40 V Automotive Power MOSFET with OptiMOS™-7 Technology
综述
The IAUZN04S7N020 is a high-current, low-RDS(on) power MOSFET in a 3x3mm² advanced leadless package with Cu-Clip for low package Ron and min. stray inductance, offering high power density, low conduction losses, and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for automotive applications such as power distribution, body control modules, and electric motors.
特征描述
- 3x3 mm² small footprint
- 60 A high current capability
- Available in leading-edge OptiMOS-7™ 40V technology
- RDS(on) range: 1.2 mΩ – 4.9 mΩ
- Advanced leadless package for low Ron and inductance
- High avalanche capability and SOA ruggedness
优势
- Highest power and current density
- High thermal capacity lead-frame package
- Reduced conduction losses
- Optimized switching behavior
- Reduced form factor vs traditional packages
- JEDEC Industry standard package PG-TSDSON-8
潜在应用
- Power Distribution
- all Body control modules
- Window-lift
- Power-lift gate
- Power-seat
- Electric Parking Brake
- High redundancy EPS
- Small BLDC drives
培训
- OptiMOS™ 7 40 volts is Infineon’s new automotive MOSFET technology.
- It presents a 25 percent Ron improvement when compared to the previous OptiMOS™ 6.
- Get to know today`s fast growing automotive MOSFET market.
- Know more about Infineon`s wide MOSFET selection for 48 V mild-hybrid electric vehicle, or MHEV, applications.
- Learn how Infineon defines a true culture of quality.
- Get to know Infineon`s Zero Defect approach and how Infineon goes beyond the requiriments when it comes to automotive MOSFET qulification.
- Get to know Infineon’s Automotive MOSFET data sheet.
- Improve your understanding of the parameters and diagrams in the document, which will help you better evaluate the device’s limits and capabilities.
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