Diode & thyristor (Si/SiC)
Power diodes and thyristors in different designs and housings
Diode & thyristor (Si/SiC) Unterkategorien
Alle Unterkategorien schließen Alle Unterkategorien anzeigenThe goal of the highest reliability and efficiency in a core technology is always a moving target; therefore we understand that continuous improvement is essential. As a market leader for power diodes and thyristors, we offer the core technology for power generation, transmission, supply, and control – on every continent in the world.
Our strongest wish is to make our customers successful in their markets. That is why we innovate, develop and manufacture the most advanced solutions for their systems: high-performance discs with highest power density and additional functions, thyristor/diode modules offering an attractive price-performance ratio, high efficient silicon or CoolSiC™ silicon carbide diodes in discrete housings as well as bare dies for the highest flexibility.
High-power diodes and thyristors are used to boost efficiency significantly in many applications. They have set standards in a power range from 10 kW to over 10 GW. Discrete silicon or silicon carbide (SiC) Schottky diodes aim for applications like server farms, solar plants orenergy storage systems. Qualified for both industrial and automotive applications.
Robust diodes and thyristors in a variety of housings
Infineon offers diodes and thyristors in discrete, module, and disc housings for a wide range of applications, voltages, temperatures, and power classes. The high overload capacity and steady on-state behaviour of these devices provides surge protection, leading to reduced downtime and a longer lifespan. They also offer high turn-on di/dt capacity, which results in increased efficiency and reliability.
All diodes and thyristors are manufactured and assembled according to robust standards to ensure RoHS-compliance. Technical accessories like clamps, gate leads, optical fibers, and laser diodes are offered to enhance products in discrete, disc, and module housings.
Types of diodes and thyristors
Infineon’s power diodes and thyristors are divided into the following subcategories: thyristor/diode discs, thyristor/diode modules, thyristor soft starter modules, bridge rectifiers & AC switches, CoolSiC™ Schottky diodes, silicon diodes and diode bare dies.
Thyristor and diode discs come in hermetically sealed ceramic housings, providing robust protection against mechanical and environmental damages. Leverage SiC-based diodes for high power density and power requirements.
For faster time to market and power-to-performance ratio, Infineon offers thyristor and diode modules. These modules offer high overload capacity, thermal stability, and a solid baseplate for easy mounting.
Learn more about Infineon’s discrete diode and thyristor offerings.
Portfolio of discrete offerings
Infineon’s comprehensive portfolio of thyristors and diodes in discrete housings lets you choose the perfect product for your design, including hard- or soft-switching topologies, and fast-switching or soft-recovery demands.
High-power light-triggered thyristors (LTTs) offer high DC blocking, surge current capabilities, and integrated protection, which helps streamline modern HVDC converter designs. Electrically-triggered thyristors (ETTs) are a good option for easy power scaling. For efficiency in hard- and resonant-switching applications, use freewheeling diodes with soft-recovery characteristics.
Silicon carbide (SiC)-based CoolSiC™ Schottky diodes are performers in high-voltage, high-temperature applications, exhibiting switching losses independent of temperature, switching speed, or load current. Infineon also offers 600 V and 1200 V ultra-soft diodes with low VF and robust EMI, and 650 V rapid diodes for applications switching between 18-100 kHz.
For the automotive welding industry, housingless welding diodes with low on-stage voltage are offered – ideal for mid-frequency resistance welding and high-current rectifier applications.
Portfolio of module offerings
Infineon’s thyristor and diode modules are cost-effective and provide easy mounting and faster installation. They are enhanced with pressure-contact or solder-bond technology. Many of these modules also incorporate thermal interface material (TIM) for increased thermal performance and reliability in high power density applications.
Pressure contact modules from 1600 V to 4400 V provide high overload capacity and blocking stability, enabling best-in-class performance and reliability in high power density and temperature requirements. Thyristor soft-starter modules are cost-effective, easy-to-use modules for low-voltage, soft-start applications. Solder bond modules bridge the gap between these modules with high performance and competitive pricing.
Thyristors have dominated this application for many decades. Nowadays thyristors as well as IGBTs are used in HVDC systems and FACTS to fulfill different needs.
The latest most price-performance generation of Infineon CoolSiC™ Schottky diode 650 V G6 offers the best efficiency per dollar.
Infineon provides a comprehensive portfolio of high-power products for Power Conversion, to help its customers to achieve their aims.
Energy means life: It heats houses, powers cars and lights megacities. The global appetite for energy is voracious, while resources are dwindling.
Rapid 1 and 2 power silicon diodes complement the existing high power 600V/650V diodes, filling the gap between the SiC diodes and emitter-controlled diodes.
Infineon`s Rapid 1 diode family, with 1.35V temperature-stable forward voltage (V F), ensures the lowest conduction losses and by means of soft recovery keeps EMI emissions to a minimum.
The Rapid 2 diode family is designed for applications switching between 40 kHz and 100 kHz by offering low reverse recovery charge (Q rr) and time (t rr) to minimize the reverse conduction times attributed to the power switch turn-on losses and thus providing maximum efficiency.