Infineon® Prime Switch

Infineon Technologies Bipolar GmbH & Co. KG launches first Press Pack IGBT (PPI) device especially designed for modern HVDC and FACTS applications: Infineon® Prime Switch

The first PPI is a 4.5 kV 3000 A device with 125 mm pole piece diameter. This PPI was designed for high current MMC converters but the use in MV Drives is also targeted. In order to cover a lot of different applications and power ranges the innovative design of internal chip-stack and housing enables Infineon to create a perfect fitting portfolio with different current values and topologies. PPI devices with or without internal Freewheeling Diodes (FWD) will form a complete new high power IGBT portfolio.

Leading high voltage IGBT chip trench technology in combination with high reliable Press Pack technology with more than 40 years of proven field track records, quality and longest lifetime offer customers an outstanding, high performance solution for ultra-high power application such as HVDC, FACTS, DC-Breaker and Drives applications which opens up new opportunities to optimize their high power application in terms or losses, reliability and cost. The PPI-housing is hermetically sealed and specially designed to withstand failure events caused by the system: The PPI offers “short-on-fail” feature and an extremely robust case non rupture performance. 

Infineon upgrade its high power IGBT portfolio with this new IGBT family in Ceramic Disc Housings.