IGLD60R070D1

Überblick

Gallium nitride CoolGaN™ 600V e-mode power transistor IGLD60R070D1 for ultimate efficiency and reliability

This product is not recommended for new designs. Please explore its successor IGLD65R055D2.

IGLD60R070D1 CoolGaN™ 600V enhancement mode power transistor offers fast turn-on and turn-off speed, minimum switching losses and enables simple half bridge topologies with highest efficiency.

The gallium nitride CoolGaN™ 600V series is qualified according to a comprehensive GaN-tailored qualification well beyond existing standards. It addresses datacom and server SMPS, telecom as well as adapter, charger, wireless charging and numerous other applications that demand highest efficiency or power density.

Features

Enhancement mode transistor – normally OFF switch
Ultra fast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Qualified for industrial applications according to JEDEC standards (JESD47 and JESD22)