IGT60R070D1

Überblick

Gallium nitride CoolGaN™ 600V e-mode power transistor IGT60R070D1 for ultimate efficiency and reliability

This product is not recommended for new designs. Please explore its successor IGT65R055D2

IGT60R070D1 CoolGaN™ 600V enhancement mode power transistor offers fast turn-on and turn-off speed, minimum switching losses and enables simple half bridge topologies with highest efficiency.

The gallium nitride CoolGaN™ 600V series is qualified according to a comprehensive GaN-tailored qualification well beyond existing standards. It addresses datacom and server SMPS, telecom as well as adapter, charger, wireless charging and numerous other applications that demand highest efficiency or power density.

Features

  • Enhancement mode transistor – normally OFF switch
  • Ultra fast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • Qualified for industrial applications according to JEDEC standards (JESD47 and JESD22)

Benefits

  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI

Target applications

Videos
Trainings

Bi-directional converters using WBG

Infineon training bi-directional converters using WBG

Understand why to use WBG switches for bi-directional converters, the topologies used and how they function.

Benefits of low inductance packages for wide bandgap semiconductors

Infineon training low inductance package for WBG semiconductors

By watching this eLearning you will:

  • Understand package inductance
  • Know why wide bandgap transistors are more susceptible to package inductance, and
  • Identify which Infineon package types have lower inductance
Qualität

Please register or log in to myInfineon to request Product Reliability Data via our support portal

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