Gate driver ICs EiceDRIVER™ gate driver ICs for MOSFETs, IGBTs, SiC MOSFETs and GaN HEMTs
Gate driver ICs Unterkategorien
Alle Unterkategorien schließen Alle Unterkategorien anzeigenEvery switch needs a driver – the right driver makes a difference. Power electronics applications employ power device switches. And power device switches require optimum gate drive solutions. That’s why we offer more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.
EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1-A up to 10-A. Robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection, make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. Download your copy of the Gate Driver Selection Guide now.
Every switch needs a driver – the right driver makes a difference
Power electronics applications employ power device switches, which require optimum gate drive solutions. Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch in any application.
EiceDRIVER™ gate drivers provide a wide range of output current options, from 0.1 A up to 18 A. Robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, and shoot-through protection, as well as fault, shutdown, and overcurrent protection, make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™ and CoolSiC™.
Download your copy of the Gate Driver Selection Guide now.
EiceDRIVER™ gate driver IC technologies
Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs for use with both silicon and wide-bandgap power devices like MOSFETs, discrete IGBTs, IGBT modules, SiC MOSFETs, and GaN HEMTs. Infineon offers excellent product families with galvanic isolated gate drivers, automotive-qualified gate drivers, 200 V, 500–700 V, 1200 V level-shift gate drivers, and non-isolated low-side drivers.
The portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options. State-of-the-art discrete switch families require the tuning of gate drive circuits to take full advantage of their capacity and capabilities. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module.
Find the right EiceDRIVER™ gate driver ICs for your applications.
EiceDRIVER™ gate driver IC features and applications
EiceDRIVER™ gate drivers provide advanced features such as integrated bootstrap diode (BSD), overcurrent protection, shutdown, fault reporting, enable, input filter, OPAMP, DESAT, programmable deadtime, shoot-through protection, active Miller clamp, active shutdown, separate sink and source outputs, short-circuit clamping, soft shutdown, two-level turn-off, slew-rate control, galvanic isolation (functional, basic, and reinforced), and more.
Ideal solutions are available for hundreds of end-applications such as automotive, industrial motor drives, solar inverters, EV charging, energy storage, robotics, UPS, server and telecom power supplies, small and major home appliances, battery-driven applications, high-voltage lighting, and more.
In this webinar, we will visit a selected Gate Driver IC portfolio which shares a common set of strengths.
Tailored Gate Driver Solutions by Infineon, This video explains why gate driver ICs are well suited for many applications such as Automotive, Major Home Appliances, Industrial Motor Drives, Solar Inverters, UPS, Switched-Mode Power Supplies, and High-Voltage Lighting.
Do you want to know more about Infineon´s gate drivers? Watch our introduction video and become familiar with our product portfolio.
1200 V Silicon-On-Insulators level-shift gate drivers from the market leader. This video demonstrates the advantages of products with Infineon SOI. E.g. Integrated bootstrap diode, Low level-shift losses - saving space and cost.
EiceDRIVER™ galvanically isolated gate drivers use the unique coreless transformer (CT) technology to provide signal transfer across the galvanic isolation.
When we are designing a switching mode power supply, PCB layout is always an important topic. Solving interference problems by slowing down the switching speed of power devices is no longer a solution. Join us to see how to optimize PCB layouts.
Every switch needs a driver, and the right driver makes a difference.
Infineon offers different isoalted gate driver families, such as the EiceDRIVER™ Compact and the EiceDRIVER™ Enhanced. Each family has different features to protect the switch and application.
The EiceDRIVER™ isolated gate driver offers advanced features such as reinforced isolation, Miller clamp, slew rate control and short circuit protection to protect the switch and application. It also enables condition monitoring and rapid prototyping.
The EiceDRIVER™ is the perfect fit for industrial application, particular in combination with Infineon CoolSiC™ and IGBT switches.
Gate drivers are key components to enable applications, such as EV charging, Solar or Energy Storage Systems. But why are gate drivers so important? Stay tuned!
- Get a good overview about motivation, market and technical details about Fuel cell systems and sub-systems
- Highlight IFX as a one-stop shop for suitable products on a Product to System level
Discover the importance of using fast output clamping for an output-side supply less than UVLO in a fast-switching application.
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
This training will give you some hints on how to select the right gate driver, the requirements of industrial drives, our offering and the dimensioning of the gate driver circuit.
Our 1200 V level-shift gate driver family is a high-voltage, level-shift technology that provides unique, measurable, and best-in-class advantages, including an integrated bootstrap-diode and industry best-in-class robustness to protect against negative transient voltage spikes.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc
Watch our webinar to discover more about technological positioning of silicon versus SiC and GaN power devices for both high and low power applications.
We offer a large portfolio of level shift high voltage gate drivers – silicon-on-insulator (SOI) and junction isolated (JI) technologies. Learn about the advantages of Infineon SOI gate driver: integrated bootstrap diode, Low level-shift losses, saving space and cost, and negative VS robustness.
