1ED3250MC12H
10 A, 5.7 kV (rms) single-channel isolated gate driver with two-level slew-rate control and active Miller clamp, UL 1577 & VDE 0884-11 certified
EiceDRIVER™ 2L-SRC Compact single-channel isolated gate driver with two-level slew-rate control (2L-SRC), active Miller clamp and 10 A typical sinking and sourcing peak output current in DSO-8 wide-body package with large creepage distance (>8 mm) for IGBTs, MOSFETs and SiC MOSFETs.
1ED3250MC12H belongs to the EiceDRIVER™ 2L-SRC Compact 1ED32xx family. 1ED3250 offers two separate outputs with 10 A typical peak output current to control two independent gate resistances for turn-on thus enabling two-level slew-rate control. It implements active Miller clamp to avoid parasitic turn-on. The driver can operate over a wide supply voltage range, either unipolar or bipolar.
Zusammenfassung der Merkmale
- EiceDRIVER™ 2L-SRC Compact single channel isolated gate driver 1ED32xx family
- Two-level slew-rate control feature (2L-SRC)
- For use with 650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
- 2300 V functional offset voltage capable for selected applications
- Galvanically isolated coreless transformer gate driver
- 10 A typical sourcing and 5 A sinking peak output current
- 40 V absolute maximum output supply voltage
- Max. 110 ns propagation delay with typ. 35 ns input filter
- High common-mode transient immunity CMTI >200 kV/μs
- Active Miller Clamp
- Short-circuit clamping and active shutdown
- DSO-8 300 mil wide-body package with large creepage distance (>8 mm)
Vorteile
- Integrated filters reduce the need of external filters
- Tight IC-to-IC turn on propagation delay matching (15 ns max.), tolerance improves application robustness without variations due to aging, current, and temperature
- 1ns propagation delay matching between outputs
- UL 1577 (planned) VISO = 6.8 kV (rms) for 1 s, 5.7 kV (rms) for 1 min
- IEC 60747-17/VDE 0884-11 with VIORM = 1767 V (peak, reinforced)
- Tight propagation delay matching between outputs enables superior slew-rate control functionality over discrete solutions
- The precise threshold and timings, combined with UL and VDE-11 certification enable superior application safety
- High isolation capability, can be used in 1700 V Drives inverter applications
Find our Variations for EiceDRIVER™ compact 1ED32xx family (2L-SRC)
| Part No | Typ. current | Feature | Active Miller Clamp | Isolation Certification |
| 10 A | Slew-rate control @ turn-on & turn-off | No | UL 1577 & VDE-11 | |
| 1ED3241MC12H | 18 A |
Slew-rate control @ turn-on & turn-off | No | UL 1577 & VDE-11 |
| 1ED3250MC12H | 10 A |
Slew-rate control @ turn-on | Yes | UL 1577 & VDE-11 |
| 1ED3251MC12H | 18 A |
Slew-rate control @ turn-on | Yes | UL 1577 & VDE-11 |
In this training, we will see how Infineon’s two-level slew-rate control (or 2L-SRC) gate driver IC can help overcome gate resistance dimensioning trade-offs in order to obtain reduced switching losses.
We will also see an example of gate resistor dimensioning, with an under-five V/ns voltage slope target, as usually seen in drive applications.
The EiceDRIVER™ 2L-SRC Compact family (1ED32xx), with two-level slew-rate control and Miller Clamp
2L-SRC optimizes the gate resistors for EMI measurements and for normal operation, compared with the conventional solution
Up to 18 A output current, 200 kV/µs CMTI, VDE 0884-11 & UL 1577, ideal for CoolSiC™ SiC MOSFET and IGBT7 in drive, solar, UPS, etc.
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
