EiceDRIVER™ 500 - 700 V Level Shift Gate Driver ICs

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Gate driver ICs tailored for major home appliance, industrial drives, residential air-conditioning, or general purpose motor control and inverters.

Including Silicon-On-Insulator (SOI) and Junction Isolation (JI) offerings. We offer three phase, half-bridge, high and low-side, single high side gate driver ICs and current sense support ICs tailored for 500 V to 700 V major home appliance, industrial drives, residential air-conditioning, or general purpose motor control and inverters.

We offer an industry leading portfolio of level shift gate driver ICs for 500 V to 700 V applications requiring functional isolation.  These drivers are available in various 3-phase, half-bridge, or high and low side configurations with protection features such as Over-current protection (OCP), de-saturation (DESAT), and under-voltage lockout (UVLO).  Status indication (Fault), Enable, and Shutdown are also available. All devices available in standard industry package styles and footprints.

Available in level-shift functional Junction Isolation and in Infineon’s unique Silicon on Insulator (SOI) technology with the SOI devices offering integrated Bootstrap Diodes (BSD) for a reduced BOM and system level cost.  The SOI devices also provide industry leading negative VS robustness for long term reliability and fast time to market.   

The Infineon SOI based solutions also support high frequency for applications with above 100 kHz switching frequency due to the 50% lower level shift losses when compared to typical junction isolated devices.

Produkte
Details
Features Benefits Applications
  • Integrated Bootstrap Diodes (SOI--Ultra fast; Low RDSON)
  • Half-bridge and three-phase solution with Infineon Silicon-On-Insulator (SOI)  technology with integrated Bootstrap Diodes (BSD)
  • Deadtime & cross-conduction prevention logic
  • Fully operational to +700 V off set voltage (device dependent)
  • Tolerate to negative transient voltage, dV/dt immune
  • Low quiescent current
  • Various input options
  • Standard pin-out and packages
  • High power efficiency
  • Fast & reliable switching
  • Protection under abnormal operation
  • Increased device reliability
  • Low-cost bootstrap power supply
  • BOM savings
  • Easy-to-use, straightforward design
  • Fast time-to-market

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Trainings

SOI level-shift gate driver IC in LLC half-bridge topologies

This training features how the level-shift gate drivers work, what are negative voltage transient and how they affect level-shift gate drivers. In addition you will learn about the technology difference between Junction isolation and Infineon’s Silicon-On-Insulator technology.

You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.

For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.

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With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

We offer a large portfolio of level shift high voltage gate drivers – silicon-on-insulator (SOI) and junction isolated (JI) technologies. Learn about the advantages of Infineon SOI gate driver: integrated bootstrap diode, Low level-shift losses, saving space and cost, and negative VS robustness.

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