WCDSC006

Überblick

Half-bridge level-shift gate-driver IC ensuring robust and efficient wireless charging operation

The half-bridge gate driver EiceDRIVER™ WCDSC006 is particularly suitable to drive both high-side and low-side MOSFETs in a half-bridge inverter configuration especially in inductive wireless power charging technology for smartphones.

The inputs of the gate driver are TTL (transistor-transistor logic) compatible and can withstand input voltages up to 7V regardless of the VDD voltage. Even though the high-side and low-side power devices are driven independently, the EiceDRIVER™ WCDSC006 gate driver enforces a 5ns (typ) dead-time to prevent shoot-through. It has a current capability of 4.0A sink and 2.0A source and offers a maximum bootstrap voltage of 60V for high input voltage operation.

The EiceDRIVER™ WCDSC006 gate driver goes together perfectly with Infineon’s OptiMOS™ 5 power MOSFET family and ensures a safe wireless power transfer by achieving high robustness and efficiency.

Zusammenfassung der Merkmale

  • -0.3V to 7V input bin capability
  • 4A sink and 2A source current capability for high-side and lo-side drivers
  • Independent high-side / low-side TTL logic inputs
  • Integrated bootstrap diode
  • Maximum bootstrap voltage of 60V
  • 5ns (typ) dead-time to prevent shoot-through

Vorteile

  • Increased robustness
  • Faster switching mode and higher efficiency results
  • Increase flexibility
  • No need of external components
  • Higher margin and more robust operation
  • No risk of cross conduction

Potentielle Zielanwendungen

Support