CoolSiC™ Hybrid IGBT Discrete
Cost-effective power switch for ultra-low switching losses
Use of a Schottky barrier diode as freewheeling diode co-packed with IGBT allows to extend capabilities of IGBT and enables significant reduction in Eon and overall switching losses. Freewheeling SiC Schottky barrier diodes significantly reduces switching losses at almost unchanged dv/dt and di/dt values.
Fast and easy, plug - and - play replacement of our 650 V TRENCHSTOP™5 IGBT designs allows instantly increase efficiency by 0.1% for each 10 kHz switching speed, meaning an application with switching speed of 23 kHz the efficiency increase will be ~ 0.23%. Use of CoolSiC™ hybrid discretes in Kelvin Emitter 4-pin package may further reduce switching losses benefiting even higher efficiency gain.
The 650 V CoolSiC™ hybrid discretes combines key benefits of the best in class 650 V TRENCHSTOP™5 IGBT technology and unipolar structure of co-packed schottky barrier CoolSiC™ diode:
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TO-247 4pin package with Kelvin emitter
TO-247 4pin package with Kelvin emitter enables faster commutation, improving the switching behaviour of IGBT. Dynamic losses are reduced by 20% in comparison to standard TO-247 package, thus increasing the overall system efficiency and enabling the IGBTs to operate at lower temperature.
The faster the IGBT is able to switch, the bigger the benefit from TO-247 4pin becomes.
In this training, we will show you step by step where and how to access Infineon SPICE and PLECS simulation models for its discrete IGBTs and CoolSiC™ products.
We will also show how to use these models and tools in an offline and online simulation.
In this training, we will show you step by step where and how to access Infineon PLECS simulation models for its discrete IGBTs and CoolSiC™ products as well as online simulation tools.
We will also show you the differences between hard and soft switching models.
