IKA08N65H5

Überblick

650 V, 8 A IGBT with anti-parallel diode in TO-220 package

High Speed 650 V, 8 A hard-switching IGBT TRENCHSTOP™ 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-220 package, is defined as "best-in-class" IGBT.

Zusammenfassung der Merkmale

  • 650 V breakthrough voltage
  • Compared to best-in-class HighSpeed 3 family
  • Factor 2.5 lower Qg
  • Factor 2 reduction in switching losses
  • 200mV reduction in VCEsat
  • Co-packed with Rapid Si-diode technology
  • Low COES/EOSS
  • Mild positive temperature coefficient VCEsat
  • Temperature stability of Vf

Vorteile

  • best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
  • 50 V increase in the bus voltage possible without compromising reliability
  • Higher power density design

Potentielle Zielanwendungen

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