IKQ40N120CH3

Überblick

1200 V, 40 A IGBT with anti-parallel diode in TO-247PLUS package

Hard-switching 1200 V, 40 A HighSpeed 3 H3 in TO-247PLUS package with soft, fast anti-parallel emitter controlled diode.

Zusammenfassung der Merkmale

  • High power density – up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
  • 20% lower R th(jh) compared to TO-247 3 pin
  • Extended collector-emitter pin creepage of 4.25 mm
  • Extended clip creepage due to fully encapsulated front side of the package

Vorteile

  • Higher system power density – I c increase keeping the same system thermal performance
  • Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247
  • Higher reliability, extended lifetime of the device
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