IKQ50N120CT2

Überblick

1200 V, 50 A IGBT discrete with anti-parallel diode in TO-247PLUS package

Hard-switching 1200 V, 50 A TRENCHSTOP™ 2 IGBT with soft, fast recovery full current rated anti-parallel emitter controlled diode in TO-247PLUS package for higher current capability. 

Zusammenfassung der Merkmale

  • High power density – up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
  • 20% lower R th(jh) compared to TO-247 3 pin
  • Extended collector-emitter pin creepage of 4.25 mm
  • Extended clip creepage due to fully encapsulated front side of the package

Vorteile

  • Higher system power density – I c increase keeping the same system thermal performance
  • Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247
  • Higher reliability, extended lifetime of the device
Diagramme
Videos
Share
Share
Support