IKQ75N120CH3

Überblick

1200 V, 75 A IGBT with anti-parallel diode in TO-247 package

Hard-switching 1200 V, 75 A HighSpeed 3 H3 in a TO-247 package co-packed with a soft and fast recovery full current anti-parallel emitter controlled diode.

Zusammenfassung der Merkmale

• High power density – up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
• 20% lower R _th(jh) compared to TO-247 3 pin
• Extended collector-emitter pin creepage of 4.25 mm
• Extended clip creepage due to fully encapsulated front side of the package

Vorteile

• Higher system power density – I _c increase keeping the same system thermal performance
• Lower thermal resistance R _th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247
• Higher reliability, extended lifetime of the device

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