TRENCHSTOP™ 5 in D2Pak

Überblick

Unique, highest power density 650 V IGBT in D2PAK footprint

Ultra-thin TRENCHSTOP^TM 5 IGBT technology from Infineon allows higher power density in smaller chip size. Infineon is the first on the market able to fit 40 A 650 V IGBT with 40 A diode in D²PAK package - 25% higher than any other competitor offering maximum 30 A Duopack IGBT in D²PAK. Now the upgrade of the available SMD designs for up to 20% higher power is possible.

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Produkte

Details

Demonstrator board 3.5 kW welding machine, single-phase, half-bridge topology using 2 pcs of IKB40N65EH5
Rated Output: 160ADC / 24VDC. Input Supply Voltage: AC220 V ±15%, 50/60 Hz

Test performed as: 6 min on, 4 min off for two welding cycles at ~3.5 kW (Grid voltage (230 V) welding/output current ~160 A); IGBT gate resistor Rg=22 Ohm.

Internal investigations on example of 3.5 kW welding machine has confirmed that 40 A 650 V IGBT co-packed with 40 A diode in TO-247 package can be replaced by 40 A 650 V IGBT co-packed with 40 A diode in D²PAK mounted on IMS (insulated metal substrate).

Key Features	Key Benefits	Appllication
Highest power density 650 V IGBT in D²Pak footprint 25% higher current than any other competitor Superior efficiency of leading TRENCHSTOP^TM5 technology	Higher power design with D²Pak package Upgrade of the available designs for higher power output Less paralleling for improved system reliability and less complexity Smaller PCB, more compact system design, smaller weight	Energy Storage UPS Welding Solar Charger