IAUCN04S7N019D
Überblick
Zusammenfassung der Merkmale
- OptiMOS7 40V ™ power MOSFET
- N-channel MOSFET
- Enhancement mode – Normal Level
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- Robust design
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green product (RoHS compliant)
- 100% Avalanche tested
Videos
Trainings
- Introduce Infineon’s automotive MOSFETs for electric two-wheeler applications, its key features, benefits, as well as the technical support available
- Identify the target applications of electric two-wheelers that require automotive MOSFETs.
- Infineon’s Dual Gate MOSFET (IAUTN08S5N012L) is an 80 V product with an RDS of 1.15 milliohms, making it an ideal choice for use in disconnect switches
- Learn more about this product and its use in power distribution applications in this training
- Be familiar with Infineon’s measures to reduce the failure rate and to prove the quality level of a product
- Identify the right product based on given target application requirements
- Get to know today`s fast growing automotive MOSFET market.
- Know more about Infineon`s wide MOSFET selection for 48 V mild-hybrid electric vehicle, or MHEV, applications.
- Learn how Infineon defines a true culture of quality.
- Get to know Infineon`s Zero Defect approach and how Infineon goes beyond the requiriments when it comes to automotive MOSFET qulification.
- Get to know Infineon’s Automotive MOSFET data sheet.
- Improve your understanding of the parameters and diagrams in the document, which will help you better evaluate the device’s limits and capabilities.
- Know the different 48 V applications for the new drivetrain architectures.
- Get an overview of Infineon`s comprehensive MOSFET portfolio.
- Have an overview of the converters needed in electric vehicles.
- Analyze the 2-quadrant converter topology in buck and boost mode and the half-bridge converter with center tap rectification topology.
- Recognize the different types of setups in the data sheets.
- Be able to calculate the junction-to-ambient thermal resistance value, the power losses, and the static DC current.
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