650V CoolMOS™ CFD2

Überblick

Balance between efficiency and robustness with fast body diode

CoolMOS™ CFD2 superjunction MOSFET family features MOSFETs with an integrated fast body diode. It is the ideal choice for high power applications such as in telecom and server markets, in which good efficiency levels need to be reached while not compromising on highest reliability and ease of use.

CFD2 devices benefit from soft commutation behavior and therefore good EMI behavior. In addition, light load efficiency, reduced gate charge, easy implementation and outstanding reliability complement the advantages of this superjunction MOSFET technology.

A trend in high power conversion is the move toward higher power density. High power density can be achieved best by resonant switching topologies such as zero voltage or zero current switching, which enable high efficiency by eliminating the turn-on losses.

Find here the successors of CFD2: 600V CoolMOS™ CFD7 and 650V CoolMOS™ CFD7.

Produkte

Details

Features, benefits and applications of 650V CoolMOS™ CFD2 SJ MOSFET

Features

650V technology with integrated fast body diode on the market
Limited voltage overshoot during hard commutation
Qg reduction compared to CFD technologies
Tight R_DS(on) max to R_DS(on) typ window
Easy to design-in

Benefits

Low switching losses due to low Q_rrat repetitive commutation on body diode
Self limiting di/dt and dv/dt
Low Q_oss
Outstanding CoolMOS™ quality

Applications

Highest ease-of-use for fast design-in

CoolMOS™ CFD2 SJ MOSFET comes with a very low voltage overshoot and minimal ringing behaviour. Reduced gate spikes combined with the high safety margin of 200V along with enable fast design-in without the need for additional ringing control.

Higher efficiency performance in mid-load to full-load conditions

CoolMOS™ CFD2 SJ MOSFET offers efficiency benefits of up to 0.6% over competing products in the critical range of mid-load to full-load conditions.

Highest reliability from lowest reverse recovery charge and reverse reovery time

Hard commutation prevails in ZVS topologies and requires a device with excellent fast body diode performance mainly dependent on a low Q _rr (reverse recovery charge) and T _rr (reverse recovery time).

The fast reverse recovery of CoolMOS™ CFD2 offers designers the benefits of

Reduce stress on the device while body diode is not fully recovered and
Extra safety margin for repetitive hard commutation in designs which translates into reduced design-in effort