IMBF170R1K0M1

Überblick

CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package

CoolSiC™ 1700 V, 1000 mΩ SiC MOSFET  in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.

Zusammenfassung der Merkmale

  • Optimized for fly-back topologies
  • Extremely low switching loss
  • 12 V / 0 V gate-source voltage compatible with fly-back controllers
  • Fully controllable dV/dt for EMI optimization
  • SMD package with enhanced creepage and clearance distances, > 7 mm

Vorteile

  • 1700 V SiC MOSFET enables simple single-ended fly-back topology at high efficiency level for use in auxiliary power supplies
  • SMD package enables direct integration into PCB, with natural convection cooling without extra heatsink
  • Reduced isolation effort due to extended creepage and clearance distances of package
  • Reduced system complexity
  • High power density
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