IMW65R048M1H
Überblick
CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package
CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMW65R048M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation. This SiC MOSFET comes in a TO247 3-pin package with a cost-effective performance.
Zusammenfassung der Merkmale
- Low capacitances
- Optimized switching behavior at higher currents
- Commutation robust fast body diode with low reverse recovery charge (Qrr)
- Superior gate oxide reliability
- Excellent thermal behavior
- Increased avalanche capability
- Works with standard drivers
Vorteile
- High performance, high reliability and ease of use
- Allows high system efficiency
- Reduces system cost and complexity
- Enables smaller system size
- Works in topologies with continuous hard commutation
- Fit for high temperature and harsh operations
- Enables bi-directional topologies
Potentielle Zielanwendungen
- Server
- Telecom
- SMPS
- Solar energy systems
- Energy storage and battery formation
- UPS
- EV charging
- Motor drives
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