FF17MR12W1M1H_B11 Half-bridge 1200 V module with CoolSiC™ MOSFET
Überblick
EasyDUAL™ 1B 1200 V, 17 mΩ half-bridge module with CoolSiC™ MOSFET enhanced generation 1, integrated NTC temperature sensor and PressFIT Contact Technology
Zusammenfassung der Merkmale
- Best-in-class package with 12 mm height
- Combination of leading edge WBG material and Easy module packages
- Very low module stray inductance
- Wide RBSOA
- 1200 V CoolSiC™ MOSFET with enhanced generation 1 trench technology
- Enlarged recommended gate drive voltage window from +15…+18 V & 0…-5 V
- Extended maximum gate-source voltages of +23 V and -10 V
- Tvjop under overload condition up to 175°C
- PressFIT pins
- Integrated NTC temperature sensor
Vorteile
- Outstanding module efficiency which enables system cost advantages
- System efficiency improvement for reduced cooling requirements
- Enabling higher frequency to Increase power density
- Best cost performance ratio wich leads to reduced system costs
Diagramme
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