F-RAM (Ferroelectric RAM)

Key features of Infineon's F-RAM memory

Infineon's F-RAM memory solutions offer a range of features, including: 

• No delay Write, which writes data to memory cells at bus speed with no soak time. 
• Ferroelectric memory products are highly durable and outlast floating-gate memories with over 100 trillion write cycles. 
• Ultra-low power and consume 200x less energy than EEPROMs and 3000x less than NOR flash.
• Radiation-tolerant and immune to soft errors caused by radiation that can produce bit flips.

Comprehensive portfolio of serial and parallel F-RAM memory solutions

Infineon offers a comprehensive portfolio of serial and parallel F-RAM non-volatile memories. Our standard F-RAMs are available in densities ranging from 4 Kb to 4 Mb. EXCELON™ is Infineon’s next generation of F-RAM memory. EXCELON™ F-RAM delivers the industry’s lowest-power non-volatile memory by combining ultra-low-power operation with high-speed interfaces, instant nonvolatility, and unlimited read/write cycle endurance, making it the ideal data logging memory for portable medical, wearable, IoT sensor, industrial, and automotive applications. They are available in densities ranging from 2 Mb to 16 Mb and support a 1.71 V to 1.89 V operating voltage range in addition to the wide-voltage 1.8 V to 3.6 V range. Learn more about our EXCELON™ F-RAMs

Highly-reliable nonvolatile memory enabled by ferroelectric technology

F-RAM memories are built on ferroelectric technology. The F-RAM chip contains a thin ferroelectric film of lead zirconate titanate, commonly referred to as PZT. The atoms in PZT change polarity in an electric field, thereby producing a power-efficient binary switch. However, the most important aspect of PZT is that it is not affected by power disruption, making F-RAM a reliable non-volatile memory. The underlying operation principle of F-RAM and its unique memory cell architecture impart specific advantages that set the technology apart from competing memory technologies like EEPROM or NOR flash.