nvSRAM (non-volatile SRAM)
Industry’s fastest nvSRAM with infinite read/write endurance and twenty years of data retention without power
nvSRAM (non-volatile SRAM) is a stand-alone non-volatile memory that instantly captures and preserves a copy of the SRAM data into non-volatile memory when power is interrupted and allows the data to be recalled without power consumption. They are ideal for datalogging applications like high-performance programmable logic controllers (PLC), smart meters, and network routers requiring fast write speed, high endurance, and instant non-volatility.
- Infinite Read/Write endurance
- Random access and fast Read/Write
- Radiation tolerant & QML-certified
- Twenty-year data retention
- No wear-leveling routines
Infineon's nvSRAM family and its features
Infineon’s nvSRAM combines industry-leading SRAM technology with best-in-class SONOS non-volatile technology and offers a comprehensive portfolio of serial and parallel nvSRAM non-volatile memories.
Our parallel nvSRAMs are the industry’s fastest parallel non-volatile RAM solutions with the fastest access time of 20 ns. These are available in densities ranging from 64 kbit to 16 Mbit and support a wide voltage range from 2.7 V to 5.5 V. These are used in applications such as RAID storage, industrial automation, and computing and networking.
Our serial nvSRAMs provide infinite read/write endurance and high-speed reads and writes. These are available in densities ranging from 64 kbit to 1 Mbit and support a wide voltage range from 2.7 V to 5.5 V. These are used in applications such as industrial control, automation equipment, and smart meters.
Infineon's nvSRAMs are available in industry-standard, RoHS-compliant packaging options such as TSOP, FBGA, SSOP, and SOIC packages.
SONOS technology
Infineon’s nvSRAM products feature a SONOS non-volatile cell, which is built on a standard SRAM cell. When power is applied, the device looks and behaves in a similar manner as a standard SRAM. However, when power drops out, each cell’s contents can be stored automatically in the non-volatile element positioned above the SRAM cell. This non-volatile element uses standard CMOS process technology to obtain the high performance of standard SRAMs.
SONOS technology takes advantage of Fowler-Nordheim tunneling (FN Tunneling) to store data by trapping charge in a sandwiched nitride layer. A key advantage of FN tunneling is that it results in vastly higher NV endurance and much slower wear out. Another advantage of SONOS technology is its ease of integration in CMOS (only two additional masks). This allows the NV cell to be located immediately adjacent to the 6T SRAM cell in each memory bit making the transfers between SRAM to NV all happen in parallel and at very low power levels. Unlike floating gate technology, SONOS memory devices enable thinner gate-stack height for stronger electrostatic control, and thus are more scalable as well.
nvSRAM vs other competing non-volatile memories
- nvSRAM consumes lesser active currents than competing EEPROM and BBSRAM (Battery-Backed SRAM or BatRAM) solutions.
- Additionally, unlike batter backed solutions, nvSRAM memories do not need an external battery to retain charge. This makes nvSRAM suitable for datalogging applications such as smart meters.
- The infinite endurance and instant non-volatility ensure that nvSRAMs outperform existing memories like EEPROM and BBSRAM in several datalogging applications.
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