IGLD60R070D1
Overview
600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability
This product is not recommended for new designs. Please explore its successor IGLD65R055D2.
The IGLD60R070D1 offers fast turn-on and turn-off speed, minimum switching losses and enables simple half-bridge topologies with highest efficiency.
It is certified through an extensive GaN-specific qualification process, exceeding industry standards.
Besides telecom and server SMPS, data centers as well as USB-C adapters and chargers, this device perfectly addresses applications that demand highest efficiency or power density.
Summary of Features
- E-mode HEMT – normally OFF switch
- Ultra fast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Superior commutation ruggedness
- JEDEC qualified (JESD47, JESD22)
- Bottom-side cooled
Benefits
- Improves system efficiency
- Improves power density
- Enables higher operating frequency
- System cost reduction savings
- Reduces EMI
Potential Applications
- Industrial
- Telecom
- Datacenter SMPS based on the half-bridge topology
Videos
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Scaling GaN to higher power levels in IBCs and LV drives
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10 kW electric vehicle charger with CoolGaN™
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Driving Infineon's CoolGaN™ GIT HEMTs with EiceDRIVER™ gate driver ICs
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Infineon CoolGaN™ delivers dynamic and cost effective solutions
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Experience the difference of Si / SiC / GaN technology
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CoolGaN™ - the new power paradigm
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CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™ Part 1
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CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™ Part 2
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CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™ Part 3
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Infineon’s 3.6 kW LLC and PFC full system solution using CoolGaN™
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840 watt isolated full-bridge primary, center tap secondary evaluation unit using CoolGaN™
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Infineon’s ¼ brick full-bridge to center tap isolated DC to DC converter
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3600 W full-bridge to full-bridge LLC DC-DC CoolGaN™ demonstration board
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3-phase GaN motor inverter demonstration with CoolGaN™
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The advantages of using the CoolGaN™ 600 V e-mode HEMTs in class E wireless charging applications
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Infineon demonstration boards for telecom featuring #CoolGaN™
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Rethink your system: hyper-scale computing enabled by #Infineon
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Infineon’s GaN solution – easier to use GaN than ever before
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Dr. Gerald Deboy, Senior Principal Power Semiconductors and System Engineering, gives insights into CoolGaN™
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Get the know-how of driving CoolGaN™ e-mode HEMTs from an expert!
| GaN EiceDRIVER™ -
Unboxing CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™
| EVAL_1EDF_G1_HB_GAN -
Driver ICs for GaN HEMTs
| GaN EiceDRIVER™ -
Lab session - 2500W full-bridge totem pole PFC evaluation board using CoolGaN™ 600V e-mode HEMT
| Watch in CN language
| EVAL_2500W_PFC_GAN_A -
Unboxing 2500W full-bridge totem pole PFC evaluation board using CoolGaN™ 600V e-mode HEMT
| EVAL_2500W_PFC_GAN_A -
CoolGaN™ 600V e-mode HEMTs bring enterprise and hyperscale data center servers to the next level of efficiency
| Watch in CN language -
Wireless power devices with GaN
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Multicopter solutions with AURIX™ and CoolGaN™
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Dr. Wei Deng, Senior Product Marketing Manager High Voltage GaN - CoolGaN™ opens new horizons for applications
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CoolGaN™ - the new power paradigm. Ultimate efficiency and reliability.
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