IGOT60R070D1
Overview
600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability
This product is not recommended for new designs. Please explore its successor IGLD65R055D2.
The IGOT60R070D1 enables more compact topologies and increased efficiency at higher frequency operation.
It is certified through an extensive GaN-specific qualification process, exceeding industry standards.
Housed in the leaded SMD DSO-20-87 package, it is designed for optimal power dissipation required in modern data centers, server, telecom, renewables, and numerous other applications.
Summary of Features
- E-mode HEMT – normally OFF
- Ultrafast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Superior commutation ruggedness
- JEDEC qualified (JESD47, JESD22)
- Low dynamic RDS(on)
- Top-side cooled
Benefits
- Improves system efficiency
- Improves power density
- Enables higher operating frequency
- System cost reduction savings
- Reduces EMI
Potential Applications
- Industrial
- Telecom
- Datacenter SMPS based on the half-bridge topology
Videos
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Scaling GaN to higher power levels in IBCs and LV drives
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10 kW electric vehicle charger with CoolGaN™
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Driving Infineon's CoolGaN™ GIT HEMTs with EiceDRIVER™ gate driver ICs
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Infineon CoolGaN™ delivers dynamic and cost effective solutions
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Experience the difference of Si / SiC / GaN technology
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CoolGaN™ - the new power paradigm
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CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™ Part 1
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CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™ Part 2
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CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™ Part 3
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Infineon’s 3.6 kW LLC and PFC full system solution using CoolGaN™
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840 watt isolated full-bridge primary, center tap secondary evaluation unit using CoolGaN™
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Infineon’s ¼ brick full-bridge to center tap isolated DC to DC converter
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3600 W full-bridge to full-bridge LLC DC-DC CoolGaN™ demonstration board
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3-phase GaN motor inverter demonstration with CoolGaN™
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The advantages of using the CoolGaN™ 600 V e-mode HEMTs in class E wireless charging applications
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Infineon demonstration boards for telecom featuring #CoolGaN™
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Rethink your system: hyper-scale computing enabled by #Infineon
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Infineon’s GaN solution – easier to use GaN than ever before
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Dr. Gerald Deboy, Senior Principal Power Semiconductors and System Engineering, gives insights into CoolGaN™
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Get the know-how of driving CoolGaN™ e-mode HEMTs from an expert!
| GaN EiceDRIVER™ -
Unboxing CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™
| EVAL_1EDF_G1_HB_GAN -
Driver ICs for GaN HEMTs
| GaN EiceDRIVER™ -
Lab session - 2500W full-bridge totem pole PFC evaluation board using CoolGaN™ 600V e-mode HEMT
| Watch in CN language
| EVAL_2500W_PFC_GAN_A -
Unboxing 2500W full-bridge totem pole PFC evaluation board using CoolGaN™ 600V e-mode HEMT
| EVAL_2500W_PFC_GAN_A -
CoolGaN™ 600V e-mode HEMTs bring enterprise and hyperscale data center servers to the next level of efficiency
| Watch in CN language -
Wireless power devices with GaN
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Multicopter solutions with AURIX™ and CoolGaN™
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Dr. Wei Deng, Senior Product Marketing Manager High Voltage GaN - CoolGaN™ opens new horizons for applications
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CoolGaN™ - the new power paradigm. Ultimate efficiency and reliability.
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