IGT60R070D1

Overview

600 V CoolGaN™e-mode power transistor for ultimate efficiency and reliability

This product is not recommended for new designs. Please explore its successor IGT65R055D2

The IGT60R070D1 enables a more compact topology and higher efficiency at higher frequency operation.

It is certified through an extensive GaN-specific qualification process, exceeding industry standards.

Housed in the bottom-side cooled HSOF-8 (TO-leadless) package, it is designed for optimal power dissipation required in modern data centers, server, telecom, renewables and numerous other applications.

Summary of Features

  • E-mode HEMT – normally OFF
  • Ultrafast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • JEDEC qualified (JESD47, JESD22)
  • Low dynamic RDS(on)
  • Bottom-side cooled

Benefits

  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI

Potential Applications

Videos
Training

Bi-directional converters using WBG

Infineon training bi-directional converters using WBG

Understand why to use WBG switches for bi-directional converters, the topologies used and how they function.

Benefits of low inductance packages for wide bandgap semiconductors

Infineon training low inductance package for WBG semiconductors

By watching this eLearning you will:

  • Understand package inductance
  • Know why wide bandgap transistors are more susceptible to package inductance, and
  • Identify which Infineon package types have lower inductance
Quality

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Support