1EDF5673F

Overview

GaN EiceDRIVER™ gate driver IC with excellent robustness and efficiency, the perfect fit to drive gallium nitride (GaN) HEMTs

The single-channel galvanically isolated gate driver IC 1EDF5673F is a perfect fit for enhancement mode (e-mode) gallium nitride (GaN) HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage, such as CoolGaN™. It ensures robust and highly efficient high voltage GaN switch operation whilst concurrently minimizing R&D efforts and shortening time-to-market.

Key benefits

Positive and negative gate drive currents:
Fast turn-on / turn-off GaN switch slew-rates

Firmly holds gate voltage at zero, during off-phase:
Avoids spurious GaN switch turn-on
Up to 50% lower dead-time losses

Configurable and constant GaN switching slew-rates, across wide range of switching frequency and duty-cycle:
Robust and energy efficient SMPS designs
Short time-to-market

Integrated galvanic isolation:
Robust operation in hard-switching applications
Safe isolation where needed