EiceDRIVER™ 1EDN71x6x

Overview

EiceDRIVER™ 200 V high-side TDI gate driver for GaN SG HEMTs and MOSFETs

The 1EDN71x6Gx is a single-channel gate-driver IC product family optimized for driving Infineon CoolGaN™ Schottky gate (SG) HEMTs, as well as other GaN SG HEMTs and Si MOSFETs. This gate driver includes several key features that enable a high-performance system design with fast-switching transistors, including truly differential input (TDI), four driving strength options, active Miller clamp, bootstrap voltage clamp, and with or without adjustable charge pump in PG-SON-10 and PG-TSNP-7 package respectively.

Thanks to the TDI feature, the gate driver output state is exclusively controlled by the voltage difference between the two inputs, independent of the driver’s reference (ground) potential as long as the common-mode voltage is below 150 V (static) and 200 V (dynamic). This eliminates the risk of false triggering due to ground bounce in low-side applications, while also allowing 1EDN71x6Gx to address even high-side applications.

Key features Key benefits Potential applications
  • Truly differential logic input (TDI)
  • Four driving strengths
  • Active Miller clamp
  • Adjustable negative charge pump (only in PG-SON-10 package version)
  • Active bootstrap capacitor
  • High side driving and low side ground bounce immunity
  • Optimize switching speed without external gate resistors
  • Avoid induced turn-on with active Miller clamping
  • Optional charge pump provides additional induced turn-on immunity when needed
  • Avoid overcharging the bootstrap capacitor during dead-time
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