High and low side drivers
High side and low side gate driver ICs to control MOSFETs and IGBTs
Our gate driver IC solutions are the expert’s choice. We offer high and low side gate drivers with two non-interlocked channels including the new 650 V high and low side silicon on insulator (SOI) gate driver ICs with high current (2.5 A) and low current (0.7 A) options. With excellent ruggedness and noise immunity, these gate drivers are perfect for motor drives, home appliance, SMPS, battery-powered applications, and high-power lighting.
Introduction to the high and low side drivers
Our top-of-the-line gate driver IC solutions are designed for precise control of MOSFETs and IGBTs, both on the high side and the low side. Trusted by industry experts, our gate driver ICs offer unmatched performance and reliability, making them the preferred choice for demanding applications. High side and low side gate drivers are essential components in power electronics systems for controlling MOSFETs and IGBTs. The high side driver is responsible for driving the upper switch (high side) of the power device, while the low side driver controls the lower switch (low side). These drivers ensure precise and synchronized switching of the power devices, enabling efficient power conversion and motor control.
High and low side drivers for a wide range of applications
We provide high and low side gate drivers with two non-interlocked channels ensuring a seamless and synchronized operation. But that's not all – we are proud to introduce our latest innovation: the 650 V high and low side Silicon on Insulator (SOI) gate driver ICs. With options for both high current (2.5 A) and low current (0.7 A), these gate drivers provide exceptional versatility and performance. Featuring excellent ruggedness and noise immunity, our gate drivers are perfectly suited for a wide range of applications including motor drives, home appliances, switch mode power supplies (SMPS), battery-powered devices, and high-power lighting systems. With our gate drivers, you can achieve precise control, efficient operation, and reliable performance, enabling your applications to excel in any environment.
Outstanding features to ensure safe and efficient operations
Choose our gate driver ICs for their outstanding features, including shoot-through protection, high and low current options, and superior ruggedness. With their exceptional noise immunity, these gate drivers guarantee reliable and optimized performance for your critical applications. Together, high-side and low-side gate drivers provide the necessary control and protection features to ensure safe and efficient operation of power devices. They play a vital role in a wide range of applications, including motor drives, power supplies, inverters, and many more, enabling precise switching and control of power electronics systems. Trust the experts' choice – choose our gate driver ICs and take your designs to new heights of excellence.
This training features how the level-shift gate drivers work, what are negative voltage transient and how they affect level-shift gate drivers. In addition you will learn about the technology difference between Junction isolation and Infineon’s Silicon-On-Insulator technology.
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
We offer a large portfolio of level shift high voltage gate drivers – silicon-on-insulator (SOI) and junction isolated (JI) technologies. Learn about the advantages of Infineon SOI gate driver: integrated bootstrap diode, Low level-shift losses, saving space and cost, and negative VS robustness.
