High side gate drivers
Single-channel and dual-channel high side gate driver ICs to control MOSFETs and IGBTs
EiceDRIVER™ high side gate driver ICs include isolated gate drivers, level-shift gate driver options, and a non-isolated gate driver family which, thanks to its truly differential control inputs, can be used as a high side driver. We provide one-channel and two-channel galvanically isolated gate driver ICs. Some include advanced protection features like DESAT and active Miller clamp and some carry UL and VDE certification.
Introduction of the high side gate drivers
Multiple UVLO threshold options are offered to best fit the driving of OptiMOS™ power MOSFETs, CoolMOS™ superjunction MOSFETs, CoolSiC™ MOSFETs, and CoolGaN™ HEMTs. We also provide one-channel level-shift high side gate driver ICs with overcurrent protection, perfect for buck topology. Automotive-qualified high side gate driver ICs are included as well. The non-isolated TDI gate driver family can be an attractive choice where high side voltages reach not more than 100 V, as is the case in some buck-boost circuitries, battery-powered motor drive applications, and half-bridge or full-bridge synchronous rectification units.
High side gate drivers product portfolio
Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs for use with silicon and wide-bandgap power devices, such as MOSFETs, discrete IGBTs, IGBT modules, SiC MOSFETs, and GaN HEMTs. We offer excellent product families of galvanic isolated gate drivers, automotive-qualified gate drivers, 200 V, 500-700 V, 1200 V level shift gate drivers, and non-isolated low-side drivers.
Further information about the high side gate drivers
Our portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options. State-of-the-art discrete switch families require a tuning of gate drive circuits to take full advantage of their capacity and capabilities. An optimum gate drive configuration is essential for all power switches, whether in discrete form or in a power module.
Did you know statistics show that the rise in population and economy will drive energy demand to increase by 58% by 2040?
Also, the current climate concerns and geopolitical instability make it even more attractive than ever to generate green, sustainable, and efficient energy, right from home!
Photovoltaic technology, for example, provides a new level of energy independence. Like few other energy sources, solar is accessible directly by consumers and communities, allowing them to build small, independent power grids for personal or collective use.
It is here that Infineon can assist our customers by providing the best-in-class solutions for each application!
As mentioned in the first part, beside social and economic reasons, climate concerns and geopolitical instability make the possibility of generating green, sustainable, and efficient energy right from home very attractive and desirable, and photovoltaic technology provides that level of energy independence.
With that in mind, Infineon is ready to assist our customers, by providing the best-in-class solutions for each application!
Stay tuned, to learn more about it!
- Know how a typical battery protection switch works and the importance of MOSFET avalanche robustness
- Identify the best-in-class Infineon offerings of demo boards, MOSFETs and gate drivers
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
- EiceDRIVER™ Enhanced now include 1ED34XX (X3 Analog), with DESAT(adjustable filter time), soft-off(adjustable current)
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET. VDE 0884-11 & UL 1577 (planned). For solar, EV charging, industrial drive, UPS, etc.
