Non-isolated, low-side drivers Single-channel and dual-channel low-side gate driver ICs to control MOSFETs and IGBTs
EiceDRIVER™ low-side gate driver ICs utilize low-voltage circuitry with the robust technology of high-voltage gate drivers and the state-of-the-art 0.13 µm process. Our world-class fabrication techniques enable high-current gate drivers for high-power-density applications in industry-standard DSO-8 and small form-factor SOT23 and WSON packages.
Our low-side gate driver ICs portfolio
Infineon offers single-low-side and dual-low-side gate driver ICs with flexible options for output current, logic configurations, packages, and protection features such as under-voltage lockout (UVLO), integrated overcurrent protection (OCP), and truly differential inputs (TDI).
Low-side gate driver IC with integrated overcurrent protection
The EiceDRIVER™ 1ED4417x family - equipped with over-current protection (OCP) which is typically implemented by a current measurement with a comparator, multiple resistors and capacitors. The gate drivers provide cost and space savings by integrating the comparator. This family of low-side gate drivers utilize Infineon’s proprietary latch immune CMOS technologies to enable a rugged monolithic construction while realizing best-in-class fault reporting accuracy with OCP threshold tolerance of +/-5%. In addition, Infineon’s IC technology enables a tiny PG-SOT23 package (or DSO-8 for 1ED44176) by combining the fault output and enable functions into a single pin.
Learn more about 25 V low-side gate drivers with protection features
Gate drivers with Truly Differential Inputs: 1EDN TDI
The input signal levels of conventional non-isolated gate-driver ICs are referenced to the ground potential of the gate-driver IC. If in the application the ground potential of the gate-driver IC shifts excessively, false triggering of the gate-driver IC can occur. Overcome ground-shift challenges in your design with Infineon’s single-channel non-isolated EiceDRIVER™ gate-driver ICs, which have truly differential inputs.
Find detailed information:
In this training, we will focus on our low-side gate driver family – 1ED4417x and on its target applications. With this information, you will be able to grow your businesses by winning new designs and customers.
In this training, we will help you increase efficiency by exploring in detail how to drive a high-speed power MOSFET.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
