600V/1200V TRENCHSTOP™ Series IGBTs

Overview

600 V/1200 V TRENCHSTOP™, TRENCHSTOP™ 2 and TRENCHSTOP™ Performance IGBTs

Our TRENCHSTOP™ IGBT technology due to combination of trench top-cell and field stop concept leads to significant improvement of static as well as dynamic performance of the device. Combination of IGBT with soft recovery Emitter Controlled-Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Products
Highlights

600 V and 1200 V TRENCHSTOP™

Features Benefits Applications
  • Lowest Vce(sat) drop for lower conduction losses
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in Vce(sat)
  • Very soft, fast recovery anti-parallel Emitter Controlled-Diode
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low Gate Charge
  • Very tight parameter distribution
  • Highest efficiency – low conduction and switching losses
  • Comprehensive portfolio in 600 V and 1200V for flexibility of design
  • High device reliability

 

 

 

 

 

 

 

600 V TRENCHSTOP™ Performance IGBT

The 600 V TRENCHSTOP™ Performance series is an IGBT, combining the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior. It enables higher efficiency in motor control, air conditioning compressors, HVAC motor drives, UPS, solar power converters and all power conversion applications working up to 30 kHz in hard-switching topologies. 

600 V TRENCHSTOP™ Performance

Features Benefits

600 V TRENCHSTOP™ Performance is a medium speed switching IGBT with 5 µsec short circuit capability. Offering:

  • Better performance: Lower switching losses, lower diode recovery losses
  • Low speed dV/dt switching (<5 V/ns), easy design
  • 5 us SC rating
  • Low EMI
  • Cost competitive
 The TRENCHSTOP™ Performance is offering:
  • lower total switching losses (Ets) i.e. better efficiency IGBT
    • 7% lower Ets for switching speed of 8 kHz
    • 11% lower Ets for switching speed of 15 kHz
  • Low speed dV/dt switching (< 5 V/ns)
  • Low EMI
  • Improved cell design for higher reliability

 

Recommended documents

Infineon EiceDRIVER™ gate driver ICs Selection guide 2019 - Every switch needs a driver
Power and Sensing Selection Guide 2019
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