TRENCHSTOP™ 5 F5

Overview

F5 Technology: The High Efficiency Variant - Performance Optimized

The 650 V TRENCHSTOP™ 5 F5 Discrete IGBT family features significantly lower switching losses compared to currently leading solutions and is the bridge between IGBTs and MOSFETs.

Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications such as Uninterruptible Power Supplies (UPS), Inverterized Welding Machines and Switch Mode Power Supplies (SMPS).

Related information about other products in this family

Products
Highlights

650 V TRENCHSTOP™ 5 F5 is targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650 V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.

Features Benefits Applications
  • 650 V breakthrough voltage
  • Compared to Infineon’s Best-in-Class HighSpeed 3 family: 
    > Factor 2.5 lower Qg 
    > Factor 2 reduction in switching losses 
    > 200 mV reduction in VCE(sat)
  • Co-packed with Infineon’s Rapid Si-diode technology
  • Low COES/EOSS
  • Mild positive temperature coefficient VCE(sat)
  • Temperature stability of Vf
  • Best-in-Class efficiency, resulting in lower junction and case temperature leading to higher device reliability
  • 50 V increase in the bus voltage possible without compromising reliability
  • Higher power density design

 

 

 

PFC + PWM topologies: 

 

 

 

 

 

 
650 V TRENCHSTOP™ 5 Family Selection Tree - Selection guide

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