TRENCHSTOP™ 5 in D²Pak
Unique, highest power density 650 V IGBT in D²PAK footprint
Ultra-thin TRENCHSTOPTM 5 IGBT technology from Infineon allows higher power density in smaller chip size. Infineon is the first on the market able to fit 40 A 650 V IGBT with 40 A diode in D2PAK package - 25% higher than any other competitor offering maximum 30 A Duopack IGBT in D2PAK. Now the upgrade of the available SMD designs for up to 20% higher power is possible.
Related information about other products in this family
The EVAL-IGBT-D²PAK board enables the evaluation of 650 V TRENCHSTOP™5 in Half-Bridge converter topology using IKB40N65EH5 IGBTs in D2Pak package mounted on IMS. The board demonstrates advantages of SMD designs on IMS versus mainstream design with IGBTs in through-hole TO247 package. Improved efficiency, lower power losses, lower IGBT junction temperature, as well as lower turn-off peak VCE during operation can be easily tested. There are 2 variants of the evaluation board
- HB topology using 2 switches 40A 650V TRENCHSTOP™5 IGBT in D²Pak package (EVAL-IGBT-D2PAK-40A)
- HB topology using 4 switches 40A 650V TRENCHSTOP™5 IGBT in D²Pak package ( 2 switches in parallel) (EVAL-IGBT-D2PAK-80A)
Internal investigations on example of 3.5 kW welding machine has confirmed that 40 A 650 V IGBT co-packed with 40 A diode in TO-247 package can be replaced by 40 A 650 V IGBT co-packed with 40 A diode in D2PAK mounted on IMS (insulated metal substrate).
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