600 V CoolMOS™ S7A / S7TA
The 600 V CoolMOS™ S7A high-voltage superjunction MOSFET family delivers the best performance for low-frequency switching applications at the best price
The CoolMOS™ S7A family stands as a significant advancement resulting from the successful technical optimization of the renowned CoolMOS™ 7 technology, tailored for low frequency switching applications by eliminating redundant features related to switching performance. This technology maintains a cost-optimized design without compromising quality or performance, while reaching very low RDS(on) values. Additionally it is crafted to exceed the highest automotive quality standards, including the AEC-Q101 standard.
The CoolMOS™ S7TA product family is a new variant of the CoolMOS™ S7A, designed to meet the specific requirements of automotive power management applications. It features an integrated temperature sensor that significantly improves the accuracy of junction temperature sensing
The integration of these features has a positive impact on the durability, safety, and efficiency of many electronic applications. The resulting benefits include improved durability, safety, and efficiency, all of which are essential in the automotive domain.
Like its S7A counterpart, the CoolMOS™ S7TA product family is particularly well suited for applications, such as HV eFuse, HV eDisconnect, and on-board chargers, demonstrating superior RDS(on) and sensing accuracy, which is crucial for various automotive electronic devices that rely on efficient power management solutions. The integration of a superjunction MOSFET with an embedded temperature sensor in the same package enhances the performance of SSRs and ensures dependable operation even under the most severe overload conditions, which is an absolute necessity for automotive applications where reliability is non-negotiable.
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CoolMOS™ S7A is the semiconductor solution for HV eDisconnect and HV eFuse. It answers eMobility needs with respect to reliability (maintenance-free), flexible and cost optimized system integration, scalability and minimized failure propagation.
CoolMOS™ S7A can bring clear benefits in on-board charger PFC stage. An efficiency improvement of +0.5% and a reduction in power losses of -30% can be achieved in a classic boost PFC topology by replacing the diode bridge with the S7A in an ALR (active line rectification) configuration.
Q-DPAK top-side cooled innovative technology allows for bigger chip implementations reaching the lowest RDS(on) in the market in an SMD. Thanks to its built-in 4th pin Kelvin source configuration and low parasitic source inductance, switching losses are minimized while controllability and ease of use are increased. The cooling concept it offers, enables the thermal decoupling of board and semiconductor. This way, higher chip temperatures are possible and system designers can benefit from the increased flexibility in the PCB design.
This training explains the benefits of using the TOLG and the target industrial and automotive applications of this package. It also lists the current available portfolio and explains what you will gain by using the package.
- Introduce Infineon’s automotive MOSFETs for electric two-wheeler applications, its key features, benefits, as well as the technical support available
- Identify the target applications of electric two-wheelers that require automotive MOSFETs.
- Know how a typical battery protection switch works and the importance of MOSFET avalanche robustness
- Identify the best-in-class Infineon offerings of demo boards, MOSFETs and gate drivers
In this video, you will:
- Be familiar with top-side cooling, its uses and benefits
- Learn how you can get the most out of your TOLT package
- Infineon has been expanding the package portfolio for it’s high-performing OptiMOS™ MOSFETs.
- Do you know SSO10T, the latest addition to Infineon’s package family for OptiMOS™ MOSFETs?
- OptiMOS™ 7 40 volts is Infineon’s new automotive MOSFET technology.
- It presents a 25 percent Ron improvement when compared to the previous OptiMOS™ 6.
- Infineon’s Dual Gate MOSFET (IAUTN08S5N012L) is an 80 V product with an RDS of 1.15 milliohms, making it an ideal choice for use in disconnect switches
- Learn more about this product and its use in power distribution applications in this training
- Be familiar with Infineon’s measures to reduce the failure rate and to prove the quality level of a product
- Identify the right product based on given target application requirements
- Get to know today`s fast growing automotive MOSFET market.
- Know more about Infineon`s wide MOSFET selection for 48 V mild-hybrid electric vehicle, or MHEV, applications.
- Learn how Infineon defines a true culture of quality.
- Get to know Infineon`s Zero Defect approach and how Infineon goes beyond the requiriments when it comes to automotive MOSFET qulification.
- Get to know Infineon’s Automotive MOSFET data sheet.
- Improve your understanding of the parameters and diagrams in the document, which will help you better evaluate the device’s limits and capabilities.
- Know the different 48 V applications for the new drivetrain architectures.
- Get an overview of Infineon`s comprehensive MOSFET portfolio.
- Have an overview of the converters needed in electric vehicles.
- Analyze the 2-quadrant converter topology in buck and boost mode and the half-bridge converter with center tap rectification topology.
- Recognize the different types of setups in the data sheets.
- Be able to calculate the junction-to-ambient thermal resistance value, the power losses, and the static DC current.
