IAUC60N04S6N031H 40V, N-Ch, 3.1 mΩ max, Automotive MOSFET, PG-TDSON-8, OptiMOS™ 6
The new integrated half-bridge (5mm x 6mm) from Infineon is the innovative and cost efficient package solution for motor drive & body applications.
The dual SSO8 5x6 mm2 package is perfectly suitable for single loads. For bridge applications the routing with a dual MOSFET is complicated and requires a large PCB area. Additionally, current rating in the dual SSO8 packages are limited to 20A.
Using the integrated half-bridge, the PCB area is sizably reduced, as it provides enhanced routing for bridge applications. The newly designed half-bridge is based on the optimized OptiMOS™6 technology. The portfolio provides a wide RDS(ON) range from 3.0 mΩ to 7.0 mΩ and increased datasheet current rating of 60A.
Summary of Features
- Integrated half bridge SSO8 (5x6)
- 5x6 mm2 reduced footprint & optimized layout for B6 apps
- Latest OptiMOS™6 40V optimized for switching & power losses
- Package JEDEC listed
- Cost efficiency for low & mid power drive apps
- Cu-clip soldered
Benefits
- Enhanced routing for bridge applications results in sizably reduced PCB area
- Optimized for OptiMOS™6
- RDS(ON) range 3.0 mΩ -> 7.0 mΩ
- Increased datasheet current rating of 60A
Potential Applications
- Introduce Infineon’s automotive MOSFETs for electric two-wheeler applications, its key features, benefits, as well as the technical support available
- Identify the target applications of electric two-wheelers that require automotive MOSFETs.
- Know how a typical battery protection switch works and the importance of MOSFET avalanche robustness
- Identify the best-in-class Infineon offerings of demo boards, MOSFETs and gate drivers
In this video, you will:
- Be familiar with top-side cooling, its uses and benefits
- Learn how you can get the most out of your TOLT package
- Infineon has been expanding the package portfolio for it’s high-performing OptiMOS™ MOSFETs.
- Do you know SSO10T, the latest addition to Infineon’s package family for OptiMOS™ MOSFETs?
- OptiMOS™ 7 40 volts is Infineon’s new automotive MOSFET technology.
- It presents a 25 percent Ron improvement when compared to the previous OptiMOS™ 6.
- Infineon’s Dual Gate MOSFET (IAUTN08S5N012L) is an 80 V product with an RDS of 1.15 milliohms, making it an ideal choice for use in disconnect switches
- Learn more about this product and its use in power distribution applications in this training
- Be familiar with Infineon’s measures to reduce the failure rate and to prove the quality level of a product
- Identify the right product based on given target application requirements
- Get to know today`s fast growing automotive MOSFET market.
- Know more about Infineon`s wide MOSFET selection for 48 V mild-hybrid electric vehicle, or MHEV, applications.
- Learn how Infineon defines a true culture of quality.
- Get to know Infineon`s Zero Defect approach and how Infineon goes beyond the requiriments when it comes to automotive MOSFET qulification.
- Get to know Infineon’s Automotive MOSFET data sheet.
- Improve your understanding of the parameters and diagrams in the document, which will help you better evaluate the device’s limits and capabilities.
- Know the different 48 V applications for the new drivetrain architectures.
- Get an overview of Infineon`s comprehensive MOSFET portfolio.
- Have an overview of the converters needed in electric vehicles.
- Analyze the 2-quadrant converter topology in buck and boost mode and the half-bridge converter with center tap rectification topology.
- Recognize the different types of setups in the data sheets.
- Be able to calculate the junction-to-ambient thermal resistance value, the power losses, and the static DC current.
