IAUCN10S7L180 100 V, N-Ch, 18 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™ 7
Overview
IAUCN10S7L180 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V. This product is offered in our versatile, robust, high current SSO8 5x6 mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications.
Summary of Features
- Fast switching times (turn on/off)
- Low on-resistance, RDS(on)
- Leading edge FOM (RDS(on) x Qg)
- High avalanche current capability
- High SOA ruggedness
- Tight threshold voltage, VGS(th), range
- Excellent thermal performance
- Low package resistance and inductance
- Unique fused source pins
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- MSL1 up to 260°C peak reflow
Benefits
- Superior switching performance
- Very low conduction losses
- Highest power density in 5x6 mm2 package
- High power efficiency
- Well suited for parallel placement
- Increased design ruggedness
- Better solder joint reliability
- Designed for Automotive robustness
- High quality production for Automotive
Potential Applications
Training
- OptiMOS™ 7 40 volts is Infineon’s new automotive MOSFET technology.
- It presents a 25 percent Ron improvement when compared to the previous OptiMOS™ 6.
- Get to know today`s fast growing automotive MOSFET market.
- Know more about Infineon`s wide MOSFET selection for 48 V mild-hybrid electric vehicle, or MHEV, applications.
- Learn how Infineon defines a true culture of quality.
- Get to know Infineon`s Zero Defect approach and how Infineon goes beyond the requiriments when it comes to automotive MOSFET qulification.
- Get to know Infineon’s Automotive MOSFET data sheet.
- Improve your understanding of the parameters and diagrams in the document, which will help you better evaluate the device’s limits and capabilities.
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