IPD50P04P4L-11 -40V, P-Ch, 10.6 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-P2
Overview
Summary of Features
- P-channel - Logic Level - Enhancement mode
- AEC qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS compliant)
- 100% Avalanche tested
- Intended for reverse battery protection
Benefits
- No charge pump required for high side drive.
- Simple interface drive circuit
- World's lowest RDSon at 40V
- Highest current capability
- Lowest switching and conduction power losses for highest thermal efficiency
- Robust packages with superior quality and reliability
- Standard packages TO-252, TO-263, TO-220, TO-262
Potential Applications
- High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)
- Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump
Videos
Training
This training explains the benefits of using the TOLG and the target industrial and automotive applications of this package. It also lists the current available portfolio and explains what you will gain by using the package.
- Introduce Infineon’s automotive MOSFETs for electric two-wheeler applications, its key features, benefits, as well as the technical support available
- Identify the target applications of electric two-wheelers that require automotive MOSFETs.
- Know how a typical battery protection switch works and the importance of MOSFET avalanche robustness
- Identify the best-in-class Infineon offerings of demo boards, MOSFETs and gate drivers
In this video, you will:
- Be familiar with top-side cooling, its uses and benefits
- Learn how you can get the most out of your TOLT package
- Infineon has been expanding the package portfolio for it’s high-performing OptiMOS™ MOSFETs.
- Do you know SSO10T, the latest addition to Infineon’s package family for OptiMOS™ MOSFETs?
- OptiMOS™ 7 40 volts is Infineon’s new automotive MOSFET technology.
- It presents a 25 percent Ron improvement when compared to the previous OptiMOS™ 6.
- Infineon’s Dual Gate MOSFET (IAUTN08S5N012L) is an 80 V product with an RDS of 1.15 milliohms, making it an ideal choice for use in disconnect switches
- Learn more about this product and its use in power distribution applications in this training
- Be familiar with Infineon’s measures to reduce the failure rate and to prove the quality level of a product
- Identify the right product based on given target application requirements
- Get to know today`s fast growing automotive MOSFET market.
- Know more about Infineon`s wide MOSFET selection for 48 V mild-hybrid electric vehicle, or MHEV, applications.
- Learn how Infineon defines a true culture of quality.
- Get to know Infineon`s Zero Defect approach and how Infineon goes beyond the requiriments when it comes to automotive MOSFET qulification.
- Get to know Infineon’s Automotive MOSFET data sheet.
- Improve your understanding of the parameters and diagrams in the document, which will help you better evaluate the device’s limits and capabilities.
- Know the different 48 V applications for the new drivetrain architectures.
- Get an overview of Infineon`s comprehensive MOSFET portfolio.
- Have an overview of the converters needed in electric vehicles.
- Analyze the 2-quadrant converter topology in buck and boost mode and the half-bridge converter with center tap rectification topology.
- Recognize the different types of setups in the data sheets.
- Be able to calculate the junction-to-ambient thermal resistance value, the power losses, and the static DC current.
Support
