OptiMOS™ 7 40 V

Overview

The next leading MOSFET technology with lowest R_DS(on)

Infineon's 40 V power MOSFETs in the latest OptiMOS™ 7 technology minimize the energy loss in the system offering the lowest R_DS(on) in a SuperSO8 5x6, perfectly matching the requirements of BMS applications.

Whilst an improvement of up to 40% in R_DS(on) compared to OptiMOS™ 6 40 V is achieved, it also reduces the PCB area by 50% compared to the DirectFET™ (L) solution, further increasing power density & reducing system cost.

Key features

BiC 40 V power MOSFET in a SuperSO8 5x6
Outstanding R_DS(on)
System form factor reduction
High system efficiency and performance
Industry standard footprint

Technology

Infineon introduces the best-in-class 40 V power MOSFET in the latest OptiMOS™ 7 trench technology.

Maintaining the technology leadership position, this new product expands the OptiMOS™ 7 portfolio from the industry´s first 15 V power MOSFETs to the lowest R_DS(on) in a SuperSO8 5x6 40 V power MOSFET, minimizing the energy loss in the system and making it best fit in BMS applications.