AIMZH120R040M1T Automotive 1200V Silicon-carbid (SiC) Trench Power MOSFET in TO247-4L (thin leads), 40mΩ
Overview
With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
Summary of Features
- Very low switching losses
- Increased turn-on voltage VGS(on)= 20 V
- Best in class switching energy
- Lowest device capacitances
- low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on
- Reduced total gate charge QGtot for lower driving power and losses
- .XT die attach technology for best in class thermal performance
- Sense pin for optimized switching performance
- Suitable for HV creepage requirements
- Thinner leads for reduced risk of solder bridges
Benefits
- Efficiency improvement
- Enabling higher frequency
- Increased power density
- Cooling effort reduction
- Reduction of system complexity and cost
Potential Applications
- On-board charger
- DC/DC converter
- Auxiliary drives
Training
- The key features and benefits of the 1200 V CoolSiC™ MOSFET in TO247-4 lead package
- How it addresses the market challenges
Support
