Power PROFET™ + 12/24/48V | automotive smart high-side switch
Lowest ohmic high-side smart power switches designed to drive high current loads up to 60 A. Designed for automotive 12V/24V/48V power net.
Embedded in different power packages and featuring the lowest RDS(on), the Power PROFET™ family offers high current and energy capability in a scalable family. The ability to drive high current loads makes Power PROFET™ + very well adapted to replace electromechanical relays, fuses, and discrete circuits. All Power PROFET™ are qualified for automotive applications according to AEC-Q100 and Power PROFET™ + additionally is PRO-SIL™ ISO 26262-ready.
- RDS(on) range 0.6-5 mΩ
- Up to 54 V operating voltage
- One channel
- Automotive qualified, AEC-Q100
- PRO-SIL™ ISO 26262-ready
- Current trip
- Analog current sense
- Basic self-protection & diagnosis
- Low standby current in Off mode
- Power & leadless packages
- Power PROFET™ + pin compatible
- Reverse ON protection (12 V)
TO-247 4pin package with Kelvin emitter
The TO-247 4pin package with Kelvin emitter enables faster commutation, improving the switching behavior of the IGBT. Dynamic losses are reduced by 20 percent in comparison to standard a TO-247 package, thus increasing the overall system efficiency and enabling the IGBTs to operate at lower temperatures.
The faster the IGBT is able to switch, the bigger the benefit from TO-247 4pin becomes.
TO-247PLUS 4pin package for 1200 V IGBT
Higher efficiency, lower switching losses with 4pin package variation: The special feature of our TO-247PLUS 4pin package is the 4th pin used as the connection to the driver IC. The 4th pin removes the influence of emitter pin inductance on the gate control loop, thus the IGBT responds faster to the driver ICs signal. A faster response of an IGBT reduces switching energy loss and enables faster turn-on and turn-off switching. Using a 4pin package instead of a 3pin allows more than 20 percent total switching losses reduction.
Higher efficiency, increased power density—lower cost: Higher efficiency and lower cost are common key requirements for next-generation designs. But can higher system performance be reached at a lower cost? A significant portion of power loss occurs within the power devices in an inverter circuit. Lower losses or higher efficiency of the power switch has a direct impact on the system power output. The less energy is lost in the system, the more can be transferred to output power, for increased system power density. The less energy is lost and more transferred to the output, the lower are output power cost kW/€.
Features and benefits of the TO-247PLUS 4pin package for 1200 V IGBT
The TO-247PLUS 4pin package for 1200 V IGBT incorporates important key features, for example, the highest current rating of 75 A, 1200 V IGBT co-packed with 75 A diode, 20 percent lower thermal resistance Rth(jh) compared to standard TO-247. Emitter creepage of 5.4 mm, fully encapsulated front side mold compound, as well as 20 percent reduction of turn-on losses due to a better feedback loop to driver IC with 4th pin Kelvin emitter package configuration. Higher system power density, Ic increase from 40 A up to 75 A, 1200 V, keeping the same system thermal performance and 20 percent lower thermal resistance Rth(jh), and improved by ~15 percent, the heat dissipation capability of TO-247PLUS compared to TO-247.
TRENCHSTOP™ 5 in TO-247 4pin Kelvin emitter package
What happens when you combine the TO-247 4pin Kelvin emitter package with TRENCHSTOP™ 5 discrete IGBT? The IGBT performance enables switching losses reduced by 20% compared to TRENCHSTOP™ 5 discrete IGBT in standard TO-247. The ever-relentless pursuit of innovation and cost improvement continues. But where’s the relief? Here is where Infineon’s TRENCHSTOP™ discrete IGBT technology combined with the TO-247 4pin Kelvin emitter package comes in. It provides you with a 20% reduction in lead inductance, achieved by implementing the 4th emitter-sense pin. And, it gives you 20% lower switching losses under full load conditions. In addition, our customers have reported a full 1% system efficiency improvement when using TRENCHSTOP™ 5 discrete IGBT in combination with the TO-247 4pin package in PFC and inverter stages. We’ve broken the 97% system efficiency barrier—as first in the industry. Furthermore, the higher efficiency and high-speed switching capability have also improved power density. Operating at up to 100 kHz, passive component sizes can be reduced significantly, and power density can be doubled when compared to the closest competitor IGBTs. This saves money and space.
Features and benefits of TRENCHSTOP™ 5 in TO-247 4pin package
The TRENCHSTOP™ 5 in TO-247 4pin Kelvin emitter package incorporates important key features, for example, the 20 percent reduction in total switching losses compared to the TO-247 package using the same technology, extremely low control inductance loop, emitter pin for driver feedback, system efficiency improvement compared to standard TO-247, benefit increase at high-current conditions, IGBTs operates under lower junction temperature, and much less power dissipation under overcurrent conditions.
Power PROFET™ are automotive-qualified single-channel smart high-side power Switches having low ohmic RDS(ON) starting from 1mOhm up to 2.5mOhm, embedded in power packages. This enables them to manage high inrush or dynamic current profiles.
Power PROFET™ have a benchmark energy capability up to 3000mJ @ Inom (single pulse) and a benchmark short-circuit performance.
You can download our relay replacement appnotes to have more information about relay replacement in general: Appnote 1, Appnote 2.
Appnotes, PSPICE simulation models, Evaluation Boards and Arduino Shields are available.
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