For many years now, Infineon’s Wide-Bandgap Developer Forum has been an exciting event, bringing together experts from the fields of SiC and GaN. 11 March 2025 will mark the latest chapter in this exclusive event series – and we would like you to be part of it!

We will be broadcasting specialist presentations live from our studio in Munich.  

Registration will open in February 2025.

So, let’s unleash the full potential of SiC and GaN together! To give you the ultimate in design flexibility, we provide the entire range of WBG power semiconductors including discretes, modules, and highly integrated solutions ranging from 40 V to 700 V for GaN and 400 V to 3.3 kV for SiC.

We invite you to join the Infineon Developer Community and reach out our experts. Simply post your question in the dedicated SiC or GaN forums and our community around the world will get back to you with answers.