CoolSiC™ schottky diodes G5 deliver market leading efficiency at attractive cost point. It has been optimized from all key aspects including junction structure, substrate and die attach. It represents a well-balanced product family which offers state-of-the-art performance and high surge capability at competitive cost level.
Infineon's highly efficient, fast recovery 650V Rapid 1 and Rapid 2 silicon diode families combine ultrathin wafer manufacturing expertise for a low loss vertical structure plus unique cell design - the Rapid diodes provide outstanding performance. The devices complement Infineon’s existing high power 600V and 650V diode portfolio by filling the gap between silicon carbide (SiC) diodes and emitter-controlled diodes to address the ultrafast and hyperfast power silicon diode markets.
Infineon's ultra soft diodes are the proven winner for motor drive applications, offering high efficiency, low conduction losses and excellent cost-performance ratio.
Emitter Controlled-Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and field-stop technology makes the Emitter Controlled Diode from Infineon ideally suited for consumer industry applications as it lowers the turn-on losses of the IGBT with soft recovery.
General Purpose Diodes for rectifying, switching and clamping. More than 60 types are available mainly in the packages 3,SOT323, SOT363 and TSLP. They meet the requirements for low leakage current, low switching time, high variation of permitted current and small packages resp. more elements per package.
Best-in-class RF performance and deep RF expertise. Proven high volume production guarantees highest part-to-part uniformity and long-term commitment for product offerings. As well as advanced package miniaturization technology supporting highly integrated modules.
