Advantages of Si Bare Dies in traction inverters
Silicon Bare Dies have long been employed in DC-powered AC motor drives due to their high current carrying capability, rapid switching speed, and cost-effectiveness. These devices offer specific benefits such as high rated voltages coupled with low conduction losses at high currents, making them seemingly well-suited for high-power motor drive applications.
Si Bare Dies offer, due to their bipolar conduction behavior, low conduction losses at high load, which is the decisive design point in many applications defining the chip size, thus making IGBTs and Diodes an attractive choice.
Therefore, Si IGBT Bare Dies are an interesting choice especially in applications where the system cost benefits at high load currents are imperative. This includes secondary (“boost axle”) inverters and cars with smaller batteries.
Advantages of our Si Bare Dies at a glance
- Maximum output current: especially under high load conditions (e.g. primary axle or boost axle application) Si IGBTs have low losses and can therefore handle high output currents.
- Cost-effectiveness: Si IGBTs are generally more cost-effective compared to other power semiconductor devices such as SiC MOSFETs, making them a preferred choice for applications where cost is a primary consideration.
- Established manufacturing infrastructure: the manufacturing processes for Si IGBTs are well-established, leading to consistent production and supply chain reliability.
- Robustness: Si IGBTs have demonstrated robust performance in various applications, particularly in industrial and automotive systems, where ruggedness is essential.
- Easy drive and control: Si IGBTs are well known and are easy to control, making them more suitable for certain applications.
- Si IGBTs are designed for smooth switching free of oscillations giving the designer benefits in terms of electromagnetic compatibility (EMC).
