Low Noise Amplifier BFP760 with High Gain and High Linearity for 2.4 GHz WLAN

Open online SPICE simulator circuit link: rf_BFP760_AN310.TSC

High Gain and High Linearity Low Noise Amplifier BFP760 for 2.4 GHz WLAN

Description
The BFP760 is a linear low noise wideband NPN bipolar RF transistor. The device is based
on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar
technology. The collector design supports voltages up to Vceo=4.0 V and currents up to Ic=70 mA.
With its high linearity at currents as low as 10 mA the device supports energy efficient designs.
The typical transit frequency is approximately 45 GHz. The device is housed in an easy to use plastic
SOT-343 package with visible leads.

Summary of features
- Very low noise amplifier based on Infineon ́s reliable, high volume SiGe:C technology.
- High linearity OIP3 = 27 dBm @ 5.5 GHz, 3 V, 30 mA
- High transition frequency fT = 45 GHz @ 1 GHz, 3 V, 35mA
- NFmin = 0.95 dB @ 5.5 GHz, 3 V, 10 mA
- Transducer gain |S21|2 = 16 dB @ 3.5 GHz, 3 V, 10 mA
- Low power consumption, ideal for mobile applications.
- Easy to use Pb-free (RoHS compliant) and halogen-free standard package with visible leads
- Qualification report according to AEC
- Q101 available

Target applications
As Low Noise Amplifier (LNA) in
- Mobile and fixed connectivity applications: WLAN 802.11a/b/c/g/n, WiMAX 2.5/3.5 GHz, Bluetooth
- Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)
and C-band LNB
- Multimedia applications such as mobile/portable TV, CATV, FM Radio
- UMTS/LTE mobile phone applications
- ISM applications like RKE, AMR and Zigbee,
as discrete active mixer, buffer amplifier in VCOs