Low Noise SiGe:C Ultra RF Transistor BFP842ESD in Low Parts Count for 2.5 GHz WLAN LNA Application

Open online SPICE simulator circuit link: rf_BFP842ESD_AN322.tsc

BFP842ESD SiGe:C Ultra Low Noise RF Transistor
in Low Parts Count 2.4 - 2.5 GHz WLAN LNA Application

Description:
- The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor)
specifically designed for 2.3 - 3.5 GHz LNA applications. The device is based
upon the reliable high volume SiGe:C technology of Infineon. The BFP842ESD
provides inherently good input power match as well as inherently good noise
match between 2.3 and 3.5 GHz.

Summary of features:
- Robust very low noise amplifier based on Infineon´s reliable, high volume
- SiGe:C technology
- Unique combination of high end RF performance and robustness: 16 dBm
maximum RF input power, 1 kV HBM ESD hardness
- High linearity OIP3 = 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA
- High transition frequency fT = 60 GHz enables very low noise figure
at high frequencies: NFmin = 0.65 dB at 3.5 GHz, 2.5 V, 5 mA
- Transducer gain |S21|2 = 16 dB @ 3.5 GHz, 2.5 V, 15 mA
- Ideal for low voltage applications e.g. VCC = 1.8 V and 2.85 V (3.3 V, 3.6 V
requires corresponding collector resistor)
- Low power consumption, ideal for mobile applications
- Easy to use Pb free (RoHS compliant) and halogen free industry
standard package with visible leads

Target applications:
As very low noise amplifier (LNA) in:
- Mobile and fixed connectivity applications: WLAN 802.11b/g/n,
WiMAX 2.5/3.5 GHz, Bluetooth
- Satellite communication systems: GNSS Navigation systems (GPS, GLONASS,
COMPASS/Beidu/Galileo), Satellite radio (SDARs, DAB and C-band LNB) and
C-band LNB (1st and 2nd stage LNA)
- Multimedia applications such as mobile/portable TV, Mobile TV, FM Radio
- 3G/4G UMTS/LTE mobile phone applications
- ISM applications like RKE, AMR and Zigbee
As discrete active mixer, buffer amplifier in VCOs