Low Noise Amplifier BGA735N16 for 3G/HSPA/LTE Application Supporting Band 3 (Low Gain)

Open online SPICE simulator circuit link: rf_BGA735N16_AN233_b3_LG.tsc

BGA735N16 for 3G/HSPA/LTE Application Supporting Band 3 (Low Gain)

S-parameters

Description:
- The BGA735N16 is a highly flexible, high linearity tri-band (2600/2300/2100, 1900/1800, 900/800/700 MHz)
low noise amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:
C technology, the BGA735N16 uses an advanced biasing concept in order to achieve high linearity.
The device features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection
onchip as well as matching off chip. Because the matching is off chip, different LTE/UMTS bands can be easily
applied. For example, the 1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing
the input and output matching network.

Summary of features:
- Gain: 16 (17) / -7.5 dB in high / low gain mode (all bands)
- Noise figure: 1.1 / 1.1 / 1.1 dB in high gain mode(800 MHz / 1900 MHz / 2100 MHz)
- Supply current: 3.4 (4.0) / 0.65 mA in high / low gain mode (all bands)
- Standby mode (< 2 μA typ.)
- Output internally matched to 50 Ω
- Inputs pre-matched to 50 Ω
- 2kV HBM ESD protection
- Low external component count
- Small leadless TSNP-16-1 package (2.3 x 2.3 x 0.39 mm)
- Pb-free (RoHS compliant) package

Target applications:
- LNA for LTE and 3G systems